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SVD2N60M Datasheet, Silan Microelectronics

SVD2N60M mosfet equivalent, 600v n-channel mosfet.

SVD2N60M Avg. rating / M : 1.0 rating-16

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SVD2N60M Datasheet

Features and benefits

∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.)=4.0Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N60M SVD2N.

Description

SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especial.

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